Abstract:
In this paper, for the first time Transmission Line Model (TLM) characterization is used to analyze ESD events in amorphous silicon thin film transistors (/spl alpha/-Si:...Show MoreMetadata
Abstract:
In this paper, for the first time Transmission Line Model (TLM) characterization is used to analyze ESD events in amorphous silicon thin film transistors (/spl alpha/-Si:H TFT). It will be shown that, above an ESD degradation threshold voltage, deterioration of electrical characteristics sets in, and that above another ESD failure threshold voltage, dielectric breakdown occurs. Electrical simulations of an /spl alpha/-Si:H TFT confirm creation of positive interface charges as being the most likely cause of the deterioration process. Two failure modes have been identified by failure analysis.
Published in: 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)
Date of Conference: 10-13 April 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5860-0
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