I. Introduction
High-power edge-emitting diode lasers are key components for a wide range of applications, such as material processing, optical frequency conversion [1], pumping for fiber amplifiers and solid-state lasers [2]. Most of these applications require a nearly diffraction-limited beam quality, a low divergence, and a narrow spectral width. Tapered lasers have received much attention for their easy fabrication and capability of maintaining a good beam quality at an output power of several watts [3]. Tapered lasers with photonic crystal structure can achieve a low vertical divergence [4]. However, the spectral width of conventional tapered lasers is the same as that of typical broad-area lasers, which usually ranges between 2 and 6 nm [4], [5].