A design of highly sensitive pressure sensor based on film bulk acoustic resonator

A high sensitivity pressure sensor based on film bulk acoustic resonator(FBAR) is designed for detecting minuteness pressure in this paper. The FBAR pressure sensor is in shear longitudinal wave structure stimulated by lateral field. The resonant frequency of the FBAR pressure sensor obtained is calculated to be 0.739GHz. Through the finite element simulation analysis of FBAR model, the first four modes of sensor are obtained. As a result, the resonant frequency of FBAR pressure sensor is 0.7108GHz; the range of sensor, 0kPa-1800kPa; and the sensitivity of sensor, 1320Hz/kPa. The result provides a guide for future applications of this structure.

I. Introduction

As a new type of RF MEMS device, thin film bulk acoustic resonator (FBAR) has received extensive attention and been researched much in recent years.^[1] Because of small size and high resonant frequency, FBAR has been widely used in wireless communications.^[2]–[5] At the same time, the features of high resonant frequency of FBAR results in its excellent sensitivity. So FBAR is also supposed to be widely applied in the field of sensing. [6]–[9]