Abstract:
New applications such as wireless integrated network sensors (WINS) require radio-frequency transceivers consuming very little power compared to usual mainstream applicat...Show MoreMetadata
Abstract:
New applications such as wireless integrated network sensors (WINS) require radio-frequency transceivers consuming very little power compared to usual mainstream applications, while still working in the ultra-high-frequency range. For this kind of application, the LC-tank-based local oscillator remains a significant contributor to the overall receiver power consumption. This statement motivates the development of good on-chip varactors available in a standard process. This paper describes and compares the available solutions to realize high-Q, highly tunable varactors in a standard digital CMOS submicrometer process. On this basis, quality factors in excess of 100 at 1 GHz, for a tuning ratio reaching two, have been measured using a 0.5-/spl mu/m process.
Published in: IEEE Journal of Solid-State Circuits ( Volume: 35, Issue: 3, March 2000)
Referenced in:IEEE RFIC Virtual JournalIEEE RFID Virtual Journal
DOI: 10.1109/4.826815
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- IEEE Keywords
- Index Terms
- Wireless ,
- Standard Process ,
- CMOS Process ,
- Varactor ,
- Low-power Applications ,
- Standard CMOS ,
- Standard CMOS Process ,
- Power Consumption ,
- Quality Factor ,
- Excess Factor ,
- Specific Capacity ,
- Equivalent Circuit ,
- Series Resistance ,
- Variation In Capacity ,
- Voltage Control ,
- Depletion Region ,
- Parasitic Capacitance ,
- Major Carrier ,
- Lumped Elements ,
- Minority Carrier ,
- Inversion Layer ,
- Accumulation Mode ,
- Integrated Circuit Design ,
- Weak Inverse ,
- Silicon Area ,
- Accumulation Layer ,
- Gate Length ,
- Gate Capacitance ,
- Low-voltage Operation ,
- Channel Resistance
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Wireless ,
- Standard Process ,
- CMOS Process ,
- Varactor ,
- Low-power Applications ,
- Standard CMOS ,
- Standard CMOS Process ,
- Power Consumption ,
- Quality Factor ,
- Excess Factor ,
- Specific Capacity ,
- Equivalent Circuit ,
- Series Resistance ,
- Variation In Capacity ,
- Voltage Control ,
- Depletion Region ,
- Parasitic Capacitance ,
- Major Carrier ,
- Lumped Elements ,
- Minority Carrier ,
- Inversion Layer ,
- Accumulation Mode ,
- Integrated Circuit Design ,
- Weak Inverse ,
- Silicon Area ,
- Accumulation Layer ,
- Gate Length ,
- Gate Capacitance ,
- Low-voltage Operation ,
- Channel Resistance