I. Introduction
At present, one of the main trends in the development of superconductive electronics is the miniaturization of Josephson junctions, which requires the use of tunneling barriers with high transparency ~0.1. In [1], investigating such Nb-Al2O3-Nb junctions as an example, it was established that the processes of Andreev reflections play an important role in them (such as in SNS type structures) and therefore the Al2O3 barrier can be considered as inhomogeneous one with the universal Shep-Bauer transparency distribution [2] for the disordered interface. The universal distribution [2] has a number of drawbacks, in particular, it is not normalizable and contains the limits and , which are not realized in the experiment. The real current-voltage characteristic (CVC) is formed as a result of averaging a large number of current-voltage curves with various values of , while the values of and differ from zero and one and are determined in each concrete case by comparing experimental and calculated characteristics [3].