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InGaAs/GaAs photorefractive quantum well device with quantum confined Stark effect | IEEE Conference Publication | IEEE Xplore

InGaAs/GaAs photorefractive quantum well device with quantum confined Stark effect


Abstract:

We demonstrated an InGaAs-GaAs photorefractive MQW device with quantum confined Stark effect (QCSE) for the first time. The maximum diffraction efficiency is 2x10/sup -4/...Show More

Abstract:

We demonstrated an InGaAs-GaAs photorefractive MQW device with quantum confined Stark effect (QCSE) for the first time. The maximum diffraction efficiency is 2x10/sup -4/. This value is 100 times smaller than the expected one. This disagreement indicates the effect of the lateral transport.
Date of Conference: 08-11 November 1999
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5634-9
Print ISSN: 1092-8081
Conference Location: San Francisco, CA, USA

References

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