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In-plane magnetosensitive double Hall device | IEEE Conference Publication | IEEE Xplore

In-plane magnetosensitive double Hall device

Publisher: IEEE

Abstract:

A novel in-plane magnetosensitive double Hall sensor, consisting of power supply and two identical three-contact n-Si cross-coupled architectures, realized in common tech...View more

Abstract:

A novel in-plane magnetosensitive double Hall sensor, consisting of power supply and two identical three-contact n-Si cross-coupled architectures, realized in common technology process, is presented. High magnetosensitivity as well as increased metrological accuracy is achieved. The residual offset is about 160 times smaller than the internal ones. The obtained output voltage-to-residual offset ratio at magnetosensitivity of 98 V/AT (T = 300 K) is very promising, reaching 7.5×10 3 at magnetic induction IT.
Date of Conference: 13-15 September 2017
Date Added to IEEE Xplore: 30 November 2017
ISBN Information:
Publisher: IEEE
Conference Location: Sozopol, Bulgaria

I. Introduction

Both the high accuracy and high sensitivity of magnetic-field sensors are critical in many fields of applications, like robotics, mechatronics, industrial controls, automation, etc. Unfortunately, many of the existing magnetometers do not match such high metrological requirements. For example, the presented in [1]–[8] magnetic-field sensors have decreased sensitivity, as only a half of the supply current is used for generating the output Hall voltage. Moreover, these devises have reduced metrological accuracy due to the both small sensitivity and the relatively high offset. The last is due to: the electrical asymmetry, caused by the geometrical imperfections in the device design; inevitable technological imprecision; mechanical and temperature, strain and stress, etc. This paper suggests a novel silicon in-plane magnetosensitive Hall microsensor, ensuring both high magnetosensitivity and increased metrological accuracy.

References

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