A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs | IEEE Journals & Magazine | IEEE Xplore

A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs


Abstract:

This paper presents an accurate quasi-physical compact large-signal model for GaN high electron mobility transistors (HEMTs). The drain current Ids expression is acquired...Show More

Abstract:

This paper presents an accurate quasi-physical compact large-signal model for GaN high electron mobility transistors (HEMTs). The drain current Ids expression is acquired by combining the zone division method and the surface potential theory. The proposed Ids model only contains 19 empirical parameters, with self-heating, ambient temperature and trapping effects considered. The self-heating effects are modeled by a polynomial function of temperature and gate voltage for the critical electric field Ec. And the ambient temperature effects are modeled by modifying pinchoff voltage and maximal electron saturated velocity. The trapping effects are considered with an effective gate-source voltage method. Moreover, taking the advantage of good physical meaning, the proposed Ids model is scalable. In house 0.15-μm GaN HEMTs with different sizes are used to validate the model by dc I-V over a wide ambient temperature range, pulsed I-V, multibias S-parameters up to 50 GHz and multibias large-signal characteristics at f0 = 30 GHz. The good results show that the proposed quasiphysical zone division model is useful for millimeter-wave GaN HEMTs development and circuit design.
Published in: IEEE Transactions on Microwave Theory and Techniques ( Volume: 65, Issue: 12, December 2017)
Page(s): 5113 - 5122
Date of Publication: 01 November 2017

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I. Introduction

GaN high-electron mobility transistors (HEMTs) are known as the promising devices for high efficiency and high power amplifiers [1]–[3]. To take full advantage of a device, a compact device model that can be used in commercial microwave circuit simulators is required. Typically, compact models for GaN HEMTs can be classified as empirical and physical models. Empirical models can accurately predict dc and large-signal RF characteristics of a device and can be easily implemented in circuit simulators [4]–[10]. However, empirical models for GaN HEMTs usually contain dozens of fitting parameters to account for self-heating, ambient temperature, and trapping effects [11]. So the extraction of empirical models usually needs lots of measurements and complicated extraction methods. This makes it inefficient to update models with process variations.

References

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