Micro-device array LED processes on CMOS/MEMS substrate

Special chip designed and fabrication micro-device array LED in panel systems. It is transferred signals onto micro-LED slides. Addressed device structure chosen LED die, which is the principle of the use of bonding technology to LED fabric placed on a CMOS/MEMS substrate, followed by micro-LED array of each style. Special chip design signals generation way is in a short time. It is a great thrust to launch the point light to form display. Specimen of panel through a special chip design (ASIC) to drive micro-LED array sequencing system technology. With the ASIC architecture circuit of the micro-LED system, it can drive 432 light points only 85μsec.

I. Introduction

Active drive architecture is driven by the CMOS circuit address point pixel. Flip-chip bonding is used to combine micro-display chips with CMOS wafers. This technology completes single point addressable electrical connections. Active drive architecture is more energy efficient than passive matrix drive technology, high response speed and other characteristics. The high-resolution display is the mainstream drive. Micro-LED Array was self-luminous display characteristics. It compared with the same self-luminous AMOLED technology [1]–[7], with better material stability and luminous efficiency. No image stigma and other issues. In addition, the Nano Second level of high-speed response allows Micro-LED micro-display high-speed modulation, bearing signal. It can play an important role in the visual display of wireless communication applications [8]–[16].