Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors

Through ab-initio quantum transport simulations the logic performance of single-layer InAs, InN, InP, and InSb III-V compounds is analyzed in this paper for n- and p-type applications. The key findings are that (i) the low electron effective masses of all these materials lead to very similar and attractive ON-currents in n-type transistors, but cause a rapid deterioration of their sub-threshold swing as the gate length shrinks to 10 nm and below, (ii) the p-type devices show much smaller and scattered current values that are too low to eventually challenge Si FinFETs, and (iii) the density-of-states bottleneck effect strongly influences the behavior of the n-type devices.

Introduction

Over the last decade single-layer two-dimensional (2D) materials have emerged as new candidates to realize next-generation nanoscale logic switches. After the exfoliation of graphene [1] novel fabrications methods have made possible the discovery of alternative 2D materials such as hexagonal boron nitride (BN) [2], molybdenum disulfide [3], and more recently phosphorene, i.e. single-layer black phosphorus [4]. The number of monolayer 2D crystals that have been isolated so far remains very low, thus leaving unexplored thousands of components with potentially exciting electrical, thermal, and/or optical properties.