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Measurement and modeling techniques for InP-based HBT devices to 220GHz | IEEE Conference Publication | IEEE Xplore

Measurement and modeling techniques for InP-based HBT devices to 220GHz


Abstract:

In this paper a measurement method for InP-Based HBT devices to 220GHz is presented. S-parameters are de-embedded using TRL calibration structures (70-220GHz) fabricated ...Show More

Abstract:

In this paper a measurement method for InP-Based HBT devices to 220GHz is presented. S-parameters are de-embedded using TRL calibration structures (70-220GHz) fabricated on-wafer. The results shown in this paper are characterized at 75-110GHz and 140-220GHz. Good agreement between the low and high frequency measurement is achieved demonstrating the capability of TRL calibration in S-parameters extraction. Small signal equivalent circuit for InP DHBT up to 220GHz is also demonstrated. Excellent agreements between measured and simulated data are obtained in the frequency range of 0.2 to 220 GHz. A six-stage amplifier MMIC designed based on the HBT model is also presented. Measurement results show that the small signal gain of the amplifier is greater than 15 dB over 140-190 GHz.
Date of Conference: 03-05 August 2016
Date Added to IEEE Xplore: 19 December 2016
ISBN Information:
Conference Location: Hong Kong, China

I. Introduction

The development of systems and application such as high speed communications, spectroscopy and remote sensing extend the need for higher frequency and bandwidth devices and circuits. Due to their high cut off frequency and high maximum oscillator frequency InP HBT devices have been wildly used in various technologies. An accurate and stable small signal equivalent circuit model plays an important role in millimeter-wave circuits designing. Because the model parameters are extracted from the measured S-parameters it is becoming essential to obtain accurate high frequency scattering parameters.

References

References is not available for this document.