Simulation of the HPM power and pulse width on the influence of ESD protection device

The effect of GGMOS type electrostatic discharge (ESD) protection device under high power microwave (HPM) is studied by numerical simulation based on semiconductor drift-diffusion model. With using the hybrid simulation of device and circuit, the transient process of the electromagnetic damage effect of the device in HPM is studied. Based on this, some important sensitive parameters like power and pulse width on the device damage effect and the mechanism are analyzed. The results show that the temperature increases with the increasing power at a definite duty ratio. With the same power, the larger the duty ratio is, the shorter the time required to reach the temperature of damage. In spite of the lack of experimental verification, the simulation calculation results are supported by the theoretical calculation and the calculation results of this paper provide theoretical reference for the design of electronic devices.

1. Introduction

With the development of high power microwave (HPM) technology, the effect of all kinds of external electromagnetic interference signals on electronic devices is increasingly concerned by researchers [1]–[3]. Ref. [2] assumes that the GaAs field effect tube in the HPM electromagnetic interference generated heat distribution area, in the followed work also studied on the transverse expansion bulk MOSFET in under the action of HPM breakdown phenomenon. The effect of MOSFET leakage current on the performance of the HPM signal was calculated by using the semiconductor simulation software ISE-TCAD in Ref. [3]. All in all, it is helpful to a better understanding of physical image and action mechanism of electronic systems against HPM, analyze the causes and mechanisms of HPM failure. As an important and basic protection component, failure or not of the ESD devices has an important influence on the regular work of electronic devices. Therefore, research on the HPM effect of ESD devices, is able to get a far better understanding on how to interfere with the electronic system, as well as provide technical reference for the protection and reinforcement of HPM.