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Equalizer-free 2-km SMF transmission of 106-Gbit/s 4-PAM signal using optical transmitter/receiver with 50 GHz bandwidth | IEEE Conference Publication | IEEE Xplore

Equalizer-free 2-km SMF transmission of 106-Gbit/s 4-PAM signal using optical transmitter/receiver with 50 GHz bandwidth


Abstract:

Using a fabricated optical transmitter and receiver with a 50-GHz bandwidth, we obtained a bit-error rate of less than 2 × 10−4 under error-free conditions using KP4 FEC ...Show More

Abstract:

Using a fabricated optical transmitter and receiver with a 50-GHz bandwidth, we obtained a bit-error rate of less than 2 × 10−4 under error-free conditions using KP4 FEC without an equalizer.
Date of Conference: 03-07 July 2016
Date Added to IEEE Xplore: 27 October 2016
ISBN Information:
Conference Location: Niigata, Japan
References is not available for this document.

I. Introduction

Recently, data-center traffic has been increasing explosively because of the rapid growth of cloud services. To cope with this trend, 400 gigabit Ethernet (400GbE) is currently being standardized by an IEEE task force [1]. 8 × 26.6-Gbaud 4-level pulse amplitude modulation (4-PAM) signals are sure to be used for 400GbE long-reach (such as 2-and 10-km) applications and optical transmitters operating at 50 Gbit/s have been reported [2]–[3]. However, there is a strong demand for a compact transceiver with low power consumption. And a smaller number of lanes is desirable if we are to reduce the power consumption and downsize the transceiver. Therefore, 100-Gbit/s/λ operation is needed.

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1.
[online] Available: http://www.ieee802.org/3/bs/.
2.
Y. Morita et al., "1.3 µm 28 Gb/s EMLs with hybrid waveguide structure for low-power-consumption CFP2 transceivers", Proc OFC2013.
3.
W. Kobayashi et al., "Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission", Electron. Lett., vol. 50, no. 9, pp. 683-685, 2014.
4.
C. Xu et al., "Performance improvement of 40-Gb/s electroabsorption modulator integrated laser module with two open-circuit stubs", IEEE Photon. Technol. Lett., vol. 24, no. 22, pp. 2046-2048, 2012.
5.
T. Fujisawa et al., "50 Gbit/s uncooled operation (5–85°C) of 1.3 µm electroabsorption modulator integrated with DFB laser", Electron. Lett., vol. 49, no. 3, pp. 204-205, 2013.
6.
S. Kanazawa et al., "Flip-chip interconnection lumped-electrode EADFB laser for 100-Gb/s/λ transmitter", IEEE Photon. Technol. Lett., vol. 27, no. 16, pp. 1699-1701, 2015.
7.
S. Kanazawa et al., "56-Gbaud 4-PAM (112-Gbit/s) operation of flip-chip interconnection lumped-electrode EADFB laser module for equalizer-free transmission", Proc. OFC, 2016.
8.
Y. Muramoto et al., "InP/InGaAs pin photodiode structure maximising bandwidth and efficiency", Electron. Lett., vol. 39, no. 24, pp. 1749-1750, 2003.
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References

References is not available for this document.