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600 V power conversion system-on-a-chip based on thin layer silicon-on-insulator | IEEE Conference Publication | IEEE Xplore

600 V power conversion system-on-a-chip based on thin layer silicon-on-insulator


Abstract:

An integrated 600 V power conversion system is described based on smart power technology which combines novel lateral high-voltage RESURF transistor structures and a merg...Show More

Abstract:

An integrated 600 V power conversion system is described based on smart power technology which combines novel lateral high-voltage RESURF transistor structures and a merged bipolar/CMOS/DMOS process flow on thin-layer SOI substrates. A new high-voltage SOI LDMOS device structure is presented which results in a factor-of-two decrease in specific on-resistance and a factor-of-two improvement in source-follower saturated current, thus overcoming a key limitation of integrated thin-layer technology. This opens new application areas for thin-layer SOI, such as lighting electronics, power modules, motor control, and others, a significant development for the integration of power conversion systems.
Date of Conference: 26-28 May 1999
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5290-4
Print ISSN: 1063-6854
Conference Location: Toronto, ON, Canada

References

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