Abstract:
An integrated 600 V power conversion system is described based on smart power technology which combines novel lateral high-voltage RESURF transistor structures and a merg...Show MoreMetadata
Abstract:
An integrated 600 V power conversion system is described based on smart power technology which combines novel lateral high-voltage RESURF transistor structures and a merged bipolar/CMOS/DMOS process flow on thin-layer SOI substrates. A new high-voltage SOI LDMOS device structure is presented which results in a factor-of-two decrease in specific on-resistance and a factor-of-two improvement in source-follower saturated current, thus overcoming a key limitation of integrated thin-layer technology. This opens new application areas for thin-layer SOI, such as lighting electronics, power modules, motor control, and others, a significant development for the integration of power conversion systems.
Published in: 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
Date of Conference: 26-28 May 1999
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5290-4
Print ISSN: 1063-6854