Abstract:
We have developed 150 V and 250 V high voltage integrated circuit technologies using high performance extended drain MOSFET (EDMOSFET) and dielectric isolation (DI) techn...Show MoreMetadata
Abstract:
We have developed 150 V and 250 V high voltage integrated circuit technologies using high performance extended drain MOSFET (EDMOSFET) and dielectric isolation (DI) technology for data and scan driving LSIs of color AC plasma display panel systems for an application of HDTV. The EDMOSFETs have invariant channel length despite process variation because of a self-aligned structure. This results in smaller chip area for the developed driver LSIs than that of conventional driver LSIs using LDMOSFETs. The data driver LSI with maximum driving current of 50 mA and 60 output channels can be applied to PDP systems with a fast addressing time of 0.7 /spl mu/s. The scan driver LSI for large-size AC PDPs has a maximum driving current of 500 mA for both the source and the sink.
Published in: 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
Date of Conference: 26-28 May 1999
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5290-4
Print ISSN: 1063-6854
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