Abstract:
A new collector-up AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. This structure is designed to minimize parasitic capacitance and to eliminate trenches...Show MoreMetadata
Abstract:
A new collector-up AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. This structure is designed to minimize parasitic capacitance and to eliminate trenches for making contacts. The emitter, external base, and intrinsic base and collector have been grown in three stages using metalorganic chemical vapor deposition (MOCVD). The current gain of this collector-up HBT (C-up HBT) with a 5*14- mu m/sup 2/ collector is 15.<>
Published in: IEEE Electron Device Letters ( Volume: 9, Issue: 8, August 1988)
DOI: 10.1109/55.764
References is not available for this document.
Select All
1.
M. F. Chang, "AlGaAs/GaAs HBTs fabricated using a self-alined dual-lift-offf process", IEEE Electron Device Lett., vol. EDL-8, no. 7, pp. 303-305, 1987.
2.
T. Ishibashi, Y. Yamauchi, O. Nakajima, K. Nagata and H. Ito, "Self-alined AlGaAs/GaAs heterojunction bipolar transistors for highspeed digital circuits", IEDM Tech. Dig., pp. 86-89, 1986.
3.
P. M. Asbeck, D. L. Miller, R. J. Anderson and F. H. Eisen, "GaAs/AlGaAs heterojunction bipolar transistors with burried oxygen-implanted isolation layers", IEEE Electron Device Lett., vol. EDL-5, no. 8, pp. 310-312, 1984.
4.
K. Taira, K. Kawai and K. Kaneko, "MOCVD-grown AlGaAs/GaAs HBTs with epitaxially embedded P+layers in extrinsic base", Electron. Lett., vol. 23, no. 19, pp. 989-990, 1987.
