Abstract:
A floating-gate MOSFET which is programmable in both directions by Fowler-Nordheim tunneling and is fabricated using an inexpensive standard 2- mu m double-polysilicon CM...Show MoreMetadata
Abstract:
A floating-gate MOSFET which is programmable in both directions by Fowler-Nordheim tunneling and is fabricated using an inexpensive standard 2- mu m double-polysilicon CMOS technology is discussed. Tunneling occurs at a crossover of polysilicon 1 with polysilicon 2. Device layout and basic device characteristics are presented, and recommendations for efficient programming are given. This is the first floating-gate FET with a tunneling injector fabricated in standard technology that has close to symmetric programming characteristics for both charging and discharging of the gate.<>
Published in: IEEE Electron Device Letters ( Volume: 12, Issue: 3, March 1991)
DOI: 10.1109/55.75728
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