Test and measurement complex for investigation of GaN based high-brightness light-emitting diodes | IEEE Conference Publication | IEEE Xplore

Test and measurement complex for investigation of GaN based high-brightness light-emitting diodes


Abstract:

Test and measurement complex was developed for investigation of degradation process of GaN based light-emitting diode optical and electric characteristics on the basis of...Show More

Abstract:

Test and measurement complex was developed for investigation of degradation process of GaN based light-emitting diode optical and electric characteristics on the basis of the existing measurement complex LED IV Analyzer. Technical data of the developed test and measurement complex were presented, and measurement results of reverse volt-ampere characteristics were shown for light-emitting diodes of low and medium power in the range of micro- and nano-current before and after test under increased operational current. Also measurement results of brightness as function of the diode test time were shown along with evaluation of failure rate acceleration factor for determination of the light-emitting diode service life under specific operation conditions.
Date of Conference: 12-14 May 2016
Date Added to IEEE Xplore: 16 June 2016
ISBN Information:
Electronic ISSN: 2380-6516
Conference Location: Moscow, Russia

I. Introduction

Light-emitting diodes (LEDs) are advanced elements of solid-state lighting devices. As compared to an incandescent filament lamp LEDs are capable to provide higher quantum yield and long-term stability [1]. However the degradation processes continue to be an important problem for LEDs. Another problem is lumen-price ratio. To solve this problem current density and therefore brightness of the LED-chip can be increased. Thus lumen-price ratio will by lower. Currently a lot of international manufacturers of LED-based lighting devices use this means.

References

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