I. Introduction
In part I, the breakdown voltage (BV) and the specific ON-resistance ( of conventional, dielectric modulated (DM), and superjunction (SJ) drift region structures were studied by analytic models and numerical simulations. The optimal BV- tradeoffs and the corresponding structure parameters were obtained from a proposed methodology. It was concluded that the DM structure yields a better BV- tradeoff than the conventional structure if a high- dielectric material is used. Filling deep trenches with a dielectric material for vertical Si MOSFETs has been demonstrated [1], and depositing high- dielectric down in high aspect ratio trenches is a standard process for a modern Dynamic Random Access Memory technology [2]. Therefore, with the advancement of CVD or other thin-film deposition processes, it is possible to realize completely filled or partially filled deep trenches with high- dielectrics.