Loading [a11y]/accessibility-menu.js
100GHz static frequency divider based on 0.5µm InP/InGaAs DHBT | IEEE Conference Publication | IEEE Xplore

100GHz static frequency divider based on 0.5µm InP/InGaAs DHBT


Abstract:

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is presented. On chip thin film resistor and capacitor were integrated. Two levels of interconn...Show More

Abstract:

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is presented. On chip thin film resistor and capacitor were integrated. Two levels of interconnect were developed. Composite collector design and 0.5μm emitter width enable the static frequency divider operated at a frequency over 100GHz.
Date of Conference: 16-18 October 2015
Date Added to IEEE Xplore: 19 April 2016
ISBN Information:
Conference Location: Guilin

I. Introduction

Static frequency divider is often used as benchmark for high speed digital integrated circuits (IC), for it usually works at highest data rate in a digital IC [1]. The highest operating frequency of Static frequency divider is often determined by the device process, which is the very foundation of every IC design. Among different materials and devices, InP/InGaAs DHBT is a suitable candidate for high speed digital ICs, because of its high electron drift velocity and vertical device structure. [2] In recent years, aggressive scaling has been achieved on InP based DHBT, maximum oscillation frequency has reached 1THz [3].

References

References is not available for this document.