Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory | IEEE Journals & Magazine | IEEE Xplore

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory


Abstract:

This letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be...Show More

Abstract:

This letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be achieved around both the active TiN electrode and the inert Pt electrode. In addition, complementary resistance switching (CRS) characteristics can be observed without current compliance during dc voltage sweep operations. Electrical measurement data fitting results indicate that the oxygen-rich ITO near top and bottom electrodes works as a double-ended resistive switching layer. Based on the analysis of the current conduction mechanism, we propose a physical model to interpret the CRS behaviors in ITO RRAM devices.
Published in: IEEE Electron Device Letters ( Volume: 37, Issue: 4, April 2016)
Page(s): 408 - 411
Date of Publication: 25 February 2016

ISSN Information:

Funding Agency:


I. Introduction

To overcome the technical and physical limitations of traditional charge storage memory, alternative memory technologies have been extensively investigated [1]–[8]. RRAM shows the most potential for a new generation of non-volatile memories (NVM) owing to its simple structure, fast operation speed, non-destructive reading, good endurance and retention, low operation power and high integration density [9]–[30].

References

References is not available for this document.