Abstract:
Radiation-induced permanent degradation and single event transient effects for optocouplers are discussed in this paper. These two effects are independent to the first or...Show MoreMetadata
Abstract:
Radiation-induced permanent degradation and single event transient effects for optocouplers are discussed in this paper. These two effects are independent to the first order and will be addressed separately. Displacement damage-induced degradation of optocoupler current transfer ratio is reviewed. New data are presented that show the importance of application specific testing and that generalized quantification of optocoupler CTR degradation can lead to incorrect predictions of actual circuit performance in a radiation environment. Data are given for various circuit loading and drive current parameters. Previous work that introduces the idea that two mechanisms exist for inducing transients on the optocoupler output is discussed. New data are presented that extends the evidence of this dual mechanism hypothesis. In this work measurements show that single event transient cross sections and transient propagation varies with circuit filtering. Finally, we discuss utilization of the optocouplers in the space environment. New data are applied to two examples: one on permanent degradation and the other on single event transient rates in high bandwidth applications.
Published in: IEEE Transactions on Nuclear Science ( Volume: 45, Issue: 6, December 1998)
DOI: 10.1109/23.736536
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1.
B.G. Rax, C.I. Lee, A.H. Johnston and C.E. Barnes, "Total Dose and Displacement Damage in Optocouplers", IEEE Trans. on Nuclear Science, vol. 43, no. 6, pp. 3167-3173, Dec 1996.
2.
A.S. Epstein and P.A. Trimmer, "Radiation Damage and Annealing Effects in Phonton Coupled Isolators", IEEE Trans. on Nuclear Science, vol. 19, no. 6, pp. 391, Dec. 1972.
3.
K.J. Soda, C.E. Barnes and R.A. Kiehl, "The Effect of Gamma Irradiation on Optical Isolators", IEEE Trans. on Nuclear Science, vol. 22, pp. 2475, Dec. 1975.
4.
C.E. Barnes and J.J. Wiczer, "Radiation Effects in Optoelectronic Devices", Sandia Report, 1984.
5.
M.D. D'Ordine, "Proton Displacement Damage in Optocouplers", 1997 IEEE Radiation Effects Workshop Record, pp. 122-124, 1997.
6.
K.A. LaBel, P.W. Marshall, C.J. Marshall, M. D'Ordine, M.A. Carts, G. Lum, et al., "Proton-Induced Transients in Optocouplers: In-Flight Anomalies Ground Irradiation Test Mitigation and Implications", IEEE Trans. on Nuclear Science, vol. 44, no. 6, pp. 1885-1892, Dec. 1997.
7.
R. Koga, S.H. Penzin, W.R Crain, S.C Moss, S.D. Pinkerton, S.D. LaLumondiere, et al., "Single Event Upset (SEU) Sensitivity Dependence of Linear Integrated Circuits (ICs) on Bias Conditions", IEEE Trans. on Nuclear Science, vol. 44, no. 6, pp. 2325-2332, Dec. 1997.
8.
R. Ecoffet, S. Duzellier, P. Tastet, C. Aicardi and M. LaBrunee, "Observation of Heavy Ion Induce transients in Linear Circuits", 1994 IEEE Radiation Effects Workshop Record, pp. 72-78, 1994.
9.
C.J. Dale, P.W. Marshall, G.P. Summers and E.A. Wolicki, "Displacement Damage Equivalent to Dose in Silicon Devices", Appl. Phys. Lett., vol. 54, no. 5, pp. 451-453, Jan. 1989.
10.
C.J. Dale, P.W. Marshall, B. Cummings, L. Shamey and A. Delamere, "Spacecraft Displacement Damage Dose Calculations for Shielded CCDs", SPIE, vol. 1656, pp. 476-487, 1992.
11.
G.P. Summers, E.A. Burke, M.A. Xapsos, C.J. Dale, P.W. Marshall and E.L. Petersen, "Displacement Damage in GaAs Structures", IEEE Trans. Nucl. Sci., vol. NS-35, no. 6, pp. 1221-1226, Dec. 1988.
12.
S.M. Khanna, A. Houdayer, A. Jorio, C. Carlone, M. Parenteau and J.W. Gerdes Jr., "Nuclear Radiation Displacement Damage Prediction in Gallium Arsenide through Low Temperature Photoluminesence Measurements", IEEE Trans. Nucl. Sci., vol. NS-43, no. 6, pp. 2601-2608, Dec. 1996.
13.
Radiation effects homepage, [online] Available: .
14.
P.W. Marshall, C.J. Dale, M.A. Carts and K.A. LaBel, "Particle-Induced Bit Errors in High Performance Fiber Optic Data Links for Satellite Data Management", IEEE Trans. Nucl. Sci., vol. 41, pp. 1958-1965, Dec. 1994.
15.
C.J. Marshall, P.W. Marshall, M.A. Carts, R.A. Reed and K.A. LaBel, "Proton-Induced Transient Effects in a Metal-Semiconductor-Metal (MSM) Photodetector for Optical-Based Data Transfer", IEEE Trans Nucl. Sci., vol. NS-45, no. 6, Dec 1998.