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A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications | IEEE Conference Publication | IEEE Xplore

A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications


Abstract:

This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricat...Show More

Abstract:

This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.
Date of Conference: 07-10 September 2015
Date Added to IEEE Xplore: 03 December 2015
Electronic ISBN:978-2-8748-7039-2
Conference Location: Paris, France

I. Introduction

In the short-range wireless applications such as autonomous wireless sensor network, low voltage and low power consumption transceivers are highly required to conserve the longer battery life. Since the largest portion of total dc power dissipation in transceiver occurs at the power amplifier (P A), the high-efficiency performance is very crucial. However, reducing the supply voltage without degrading the efficiency is very challenging. Several topologies were reported to achieve high efficiency performance at low voltage operations [1]–[6]. The power amplifier in [1] proposed a parallel amplification to realize high efficiency performance at supply voltage of 1.5 V. This technique, however, requires large chip size due to utilization of large LC balun as parallel combiners. Although injection-locking technique in [2] achieves high gain and high efficiency at low supply voltage, the circuit was complicated.

References

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