Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications

A C-band high-power and high power added efficiency (PAE) high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) fabricated by using 0.25 μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology has been developed for phased array antennas. The MMIC operates in pulse conditions of 100 μs pulse width and 10% of duty cycle over the frequency from 5.2 to 6.8 GHz. The MMIC exhibits an output power of 45.7 dBm to 46.4 dBm and a power added efficiency (PAE) of 51.5% to 56.5% under a drain voltage of 30 V. The MMIC size is as small as 12.54 mm², generating an output power density up to 3.48 W/mm² over the chip area and up to 4.55 W/mm over the active periphery.

I. Introduction

High power amplifier (HPA) is one of the critical components in the transmit/receive (T/R) modules of the phased array radar systems. For the next generation T/R module for phased array radars, gallium nitride (GaN) based HPAs are essential for the high output power, high efficiency, and small size. Even gallium arsenide (GaAs) HPA monolithic microwave integrated circuit (MMIC) with a high voltage breakdown field plate technology delivered an output power of 30 W [1], GaN HPA MMICs have been proven to be a promising candidate providing wider bandwidth, higher output power density and efficiency, and better thermal properties with improved reliability [2], [3].