I. Introduction
As CMOS process provides low cost, low power and high integration with digital circuits, more and more RF/microwave components are implemented on CMOS process. In recent years, due to increased bandwidth and data rate requirement. K-band (18–26.5 GHz) is applied on short-distance communications, automotive anti-collision radar and FCMW radar systems [1]. For K-band transceiver applications, low noise amplifier (LNA) is the first component in a receiver. In order to achieve good SNR ratio, high gain, low power and good linearity LNA design is an important issue [2].