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W-band InP DHBT MMIC Power Amplifier | IEEE Conference Publication | IEEE Xplore

W-band InP DHBT MMIC Power Amplifier


Abstract:

In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is con...Show More

Abstract:

In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors. The total circuit shows small signal gain is above 15dB from 90GHz to 96GHz, and the simulated saturation output power reaches 18.5dBm@94GHz. The chip area is only 1.61mm×1.03mm. This W-band power amplifier MMIC is now being fabricated in progress on the NEDI compound semiconductor process line.
Date of Conference: 05-07 December 2014
Date Added to IEEE Xplore: 19 March 2015
ISBN Information:
Conference Location: Beijing, China

I. Introduction

Millimeter-wave MMIC power amplifiers are critical components in mm-wave wireless data networks, automotive and military radars. HEMTs with electron beam written gate fingers have until recently exhibited higher mm-wave gains than HBTs, and have dominated W-band applications. By scaling HBTs to submicron junction dimensions and reducing the impact of extrinsic parasitic capacitance [2], very high cutoff frequencies can be obtained which make HBT amplifiers at W-band feasible. Double heterojunction bipolar transistor (DHBT) technology has the advantage of providing improved linearity and efficiency over pHEMT devices[1]. However, DHBT power amplifiers still exhibit lower output power than pHEMT amplifiers at W-band frequency [3]–[9], So in practice a drive amplifier is often used before the power amplifier, yet it increases the area and cost.

References

References is not available for this document.