Abstract:
This paper presents a new model fur stress-induced leakage current (SILC) in ultrathin SiO/sub 2/ films, that is able to explain and accurately represent the experimental...Show MoreMetadata
Abstract:
This paper presents a new model fur stress-induced leakage current (SILC) in ultrathin SiO/sub 2/ films, that is able to explain and accurately represent the experimental data obtained with MOS capacitors fabricated with different technologies and oxide thickness in the 3-7 nm range.
Published in: IEEE Transactions on Electron Devices ( Volume: 45, Issue: 7, July 1998)
DOI: 10.1109/16.701488
