Design of high efficiency GaN HEMT class-F power amplifier at S-band | IEEE Conference Publication | IEEE Xplore

Design of high efficiency GaN HEMT class-F power amplifier at S-band


Abstract:

Microwave power transmission is one of the key technologies to realize solar power satellite. In this paper, the authors design a high efficiency GaN Class-F power amplif...Show More

Abstract:

Microwave power transmission is one of the key technologies to realize solar power satellite. In this paper, the authors design a high efficiency GaN Class-F power amplifier at 2.45GHz. Power added efficiency is up to 78.8% and output power is 40.3dBm in simulation. Simulated results predict high performance of the proposed PA.
Date of Conference: 26-29 July 2014
Date Added to IEEE Xplore: 22 December 2014
ISBN Information:
Conference Location: Harbin, China

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