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Successful Demonstration of Low-Voltage (1 Vpp) MZI-Type EAM-Integrated DFB Laser for 25.8-Gbit/s 40-km Transmission | IEEE Conference Publication | IEEE Xplore

Successful Demonstration of Low-Voltage (1 Vpp) MZI-Type EAM-Integrated DFB Laser for 25.8-Gbit/s 40-km Transmission


Abstract:

We developed a new type of EAM-integrated DFB laser that employs both optical absorption and interferometric extinction. And, we achieve a 25.8-Gbit/s 40Gbit/s 40-km tran...Show More

Abstract:

We developed a new type of EAM-integrated DFB laser that employs both optical absorption and interferometric extinction. And, we achieve a 25.8-Gbit/s 40Gbit/s 40-km transmission with the km novel laser at a modulation voltage of 1 Vpp.
Date of Conference: 07-10 September 2014
Date Added to IEEE Xplore: 18 December 2014
Electronic ISBN:978-1-4799-5722-4

ISSN Information:

Conference Location: Palma de Mallorca, Spain
Citations are not available for this document.

1. Introduction

Electroabsorption modulator (EAM)-integrated distributed feedback lasers (EA-DFBs) are key components of metro-area and client-side optical communication systems1–5). In such middle-distance applications, optical transmitters are being required to transmit data at a higher rate with lower power consumption. An effective way of reducing transmitter power consumption is to reduce the modulation voltage (Vm) of an EA-DFB because the larger Vm an EAM driver supplies, the more power it consumes. However, there is a trade-off between Vm and the extinction ratio (ER) of an EAM and systems operating above middle distance require optical transmitters with a relatively high ER.

Cites in Papers - |

Cites in Papers - IEEE (1)

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1.
Shigeru Kanazawa, Takeshi Fujisawa, Hiroyuki Ishii, Kiyoto Takahata, Yuta Ueda, Ryuzo Iga, Hiroaki Sanjoh, "High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique", IEEE Journal of Selected Topics in Quantum Electronics, vol.21, no.6, pp.183-188, 2015.
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References

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