Contents I. Introduction
Nitride semiconductors have important applications for lasers and light-emitting diodes (LEDs) [1]–[2], power electronics [3], thermoelectricity [4], solar cells [5], terahertz photonics [6] and high frequency electronic devices [7]. In the last decade, a lot of fundamental and applied research has been done on the wide band gap nitride semiconductors, mainly as materials for lasers and LEDs in the blue-green and ultraviolet spectral regions [1]–[2]. As nitride lasers and light-emitting diodes (LEDs) have higher lifetimes which make them more commercially attractive over previously used II -VI devices [8]. Recently, nitride based single or multiple quantum wells are also studied in the spectral range over 1100 nm due to the prospect of their applications in optoelectronic devices like waveguide switches, infrared photo-detectors, etc. For modern optical communication, particularly the wavelengths of 1330 nm and 1550 nm are most important for short distance and long distance communication, respectively. At 1330 nm, dispersion of a signal is lowest and at 1550 nm path loss of a signal is the lowest among the available communication wavelength [9]. III-nitride semiconductors like GaN, AlN, InN and their alloys are attracting much interest for optoelectronic devices in these near-infrared spectral range for fiber optic communications.
