Low Temperature Processed Two-Transistor- Two-Capacitor-Based Ferroelectric Random Access Memory

We have demonstrated a low temperature fully integrated process for a ferroelectric random access memory array for potential flexible electronics applications. The memory cell is based on a two-transistor-two-capacitor structure, with cadmium sulfide as the semiconductor material for n-channel thin-film transistors, and poly(vinylidene fluoride-trifluoroethylene) copolymer as the ferroelectric material for capacitors. At VDD = 5 V, a voltage difference of ~1 V between the two states (0 and 1) is achieved at the output of the sense amplifier.

I. Introduction

Electronic devices and systems compatible with flexible electronics applications have received more attention in recent years. The major goal of this technology is to develop flexible, bendable or stretchable devices, and systems for applications, such as displays [1], sensors [2], logic circuit components [3], and memories [4]. To achieve these goals, different materials and fabrication processes have to be developed to be compatible with the low temperature substrates. Both organic and inorganic materials have been utilized to fabricate devices [5]–[7]. Devices fabricated with hybrid materials (organic and inorganic materials) have also been demonstrated to achieve better performance [8], [9].