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InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz | IEEE Journals & Magazine | IEEE Xplore

InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz


Abstract:

Uni-traveling-carrier photodiodes (UTC-PD's) with ultrafast response and high-saturation output are reported. It is experimentally demonstrated that the photoresponse of ...Show More

Abstract:

Uni-traveling-carrier photodiodes (UTC-PD's) with ultrafast response and high-saturation output are reported. It is experimentally demonstrated that the photoresponse of UTC-PD's is improved by incorporating a step-like potential profile in the photoabsorption layer. The fabricated device shows a peak electrical 3-dB bandwidth of 152 GHz at a low reverse bias voltage of -1.5 V. The output voltage can be increased to as high as 1.9 V at higher reverse bias voltages with the 3-dB bandwidth staying at over three-quarters of the maximum value. To our knowledge, the obtained response is the fastest among those reported for 1.55-μm wavelength photodiodes.
Published in: IEEE Photonics Technology Letters ( Volume: 10, Issue: 3, March 1998)
Page(s): 412 - 414
Date of Publication: 06 August 2002

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