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Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers | IEEE Journals & Magazine | IEEE Xplore

Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers


Abstract:

The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, Tdrain, in the Pospieszalski noise model is determined...Show More

Abstract:

The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, Tdrain, in the Pospieszalski noise model is determined as a function of drain current by measurements of the 1-GHz noise of discrete transistors with 50- Ω generator impedance. The dc I-V for the transistors under test are presented and effects of impact-ionization are noted. InP devices with both 100% and 75% indium mole fraction in channel are included. Examples of the design and measurement of very wideband low-noise amplifiers (LNAs) using the tested transistors are presented. At 20-K physical temperature the GaAs LNA achieves 10-K noise over the 0.7-16-GHz range with 16 mW of power and an InP LNA measures 20-K noise over the 6-50-GHz range with 30 mW of power.
Published in: IEEE Transactions on Microwave Theory and Techniques ( Volume: 61, Issue: 9, September 2013)
Page(s): 3285 - 3297
Date of Publication: 23 July 2013

ISSN Information:


I. Introduction

Compound semiconductor low-noise amplifiers (LNAs) have long been the leading front-end receiver component in applications requiring state-of-the-art performance, such as defense, remote sensing, and radio astronomy. Among these, radio astronomy systems require the lowest noise temperature and very high gain stability under cryogenic operation.

References

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