ETB-QW InAs MOSFET with scaled body for improved electrostatics

This paper reports Extremely-Thin-Body (ETB) InAs quantum-well (QW) MOSFETs with improved electrostatics down to L_g = 50 nm (S =103 mV/dec, DIBL = 73 mV/V). These excellent metrics are achieved by using extremely thin body (1/3/1 nm InGaAs/InAs/InGaAs) quantum well structure with optimized layer design and a high mobility InAs channel. The ETB channel does not significantly degrade transport properties as evidenced by g_m >1.5 mS/μm and v_inj = 2.4 × 10 cm/s.

Introduction

The superior electron transport properties of III — V materials enable an attractive route to V_dd scaling at sub 10 nm nodes. Extremely thin (ET) architectures (finFET or planar ETB) are a choice of technology at these geometries to maintain electrostatic integrity and control short channel effects (SCE) [1]–[3]. However, thinning down a channel degrades carrier transport properties. For the first time, we report ETB-QW InAs MOSFETs that exhibits excellent SCE control and favorably benchmarks an injection velocity (Vinj) against other III-V and Si devices. This comparison demonstrates that channel thickness can be scaled to at least 5 nm and the V_inj advantage over Si maintained, demonstrating a potential scaling pathway to sub 10-nm technology node.