I. Introduction
The development of Insulated gate Bipolar Transistor (IGBT) modules operating under high voltage (up to 6.5 kV in railway applications) requires to study in details the degradation mechanisms of insulating materials, in order to ensure the long-term reliability of the devices. To evacuate the heat coming from semiconductors (transitors or diodes) towards heat-dissipating systems, these components are usually mounted on metallized ceramic substrates, choosen for both their electrical properties under high voltage, thermal properties (resistance to high temperatures, good thermal conductivity), and mechanical properties (dilatation coefficients as close as possible with the other materials). The substrate materials frequently used are Aluminium Nitride (AlN) and Alumina (Al2O3).