Efficient computation of modulation bandwidth of GaInAsP/InP Distributed Reflector (DR) laser with quantum wire structures

In this study modulation bandwidth of GaInAsP/InP laser has been analyzed. Distributed Reflector (DR) laser consisting of a DFB (distributed feed back) laser with high reflection DBR( distributed Bragg reflector) at the rear end is studied by considering wirelike active region. Highest modulation bandwidth of 16 GHz has been realized theoretically. Maximum bandwidth is observed in the DR laser with Double Quantum wire stack, 180µm cavity length and 120nm wire width. The proposed structure also provides good static characteristics such as threshold current of 0.53mA and differential quantum efficiency of about 49.5%.

I. Introduction

Distributed reflector Laser with DFB section is widely used in optical communication. Thus the dynamic character is as important as the static character. To improve the performance the DR laser should have lower threshold current along with higher modulation bandwidth. High bandwidth of 30GHz on two-section InGaAsP DBR lasers has reported.[1] Short-cavity In0.35Ga0.65As/GaAs MQW lasers with modulation bandwidths up to 33 GHz using beryllium (Be) as p-dopant in the active region hes been reported.[2] DR lasers with wirelike active regions are potential candidate for a cost-effective light source for metro application and optical interconnection[3].