Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate | IEEE Journals & Magazine | IEEE Xplore

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate


Abstract:

We report the first demonstration of a GaN-based planar metal-semiconductor-metal (MSM) ultraviolet (UV) avalanche photodiode (APD). The MSM APD with semitransparent inte...Show More

Abstract:

We report the first demonstration of a GaN-based planar metal-semiconductor-metal (MSM) ultraviolet (UV) avalanche photodiode (APD). The MSM APD with semitransparent interdigitated Schottky electrodes is fabricated on a low-defect-density GaN homoepitaxial layer grown on a bulk GaN substrate by metal-organic chemical vapor deposition. The dislocation density of the GaN homoepilayer characterized by a cathodoluminescence mapping technique is ~ 5 ×106 cm-2. The photodiode exhibits a low dark current density of ~ 1.4 × 10-9 A/cm2 and a high UV-to-visible rejection ratio up to five orders of magnitude under 20-V bias. At high bias, a room-temperature avalanche gain of more than 1100 is achieved under 365-nm UV illumination. The breakdown voltage of the APD shows a positive temperature coefficient of 0.15 V/K, confirming that the high-voltage gain is dominated by the avalanche breakdown mechanism.
Published in: IEEE Electron Device Letters ( Volume: 32, Issue: 9, September 2011)
Page(s): 1260 - 1262
Date of Publication: 14 July 2011

ISSN Information:

Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China

Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Nanjing National Laboratory of Microstructures, The Jiangsu Provincial Key Laboratory of Advanced Photonic and ElectronicMaterials, and School of Electronic Science and Engineering, Nanjing University, Nanjing, China

References

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