I. Introduction
The expansion of the wireless market has given a tremendous push to the development of advanced mobile communication systems [1], [2]. And mobile handsets have been evolved for miniaturization in operating frequencies of the full band. Also, balanced structure has been widely demanded in the low noise amplifier (LNA), for its advantages of common-mode noise rejection, so is the post-LNA filter and balanced duplexer preferred. But almost all the balanced duplexers and post-LNA filters using surface acoustic wave (SAW) are off-chip, even in the latest receiver architectures [3]. These off-chip components become the obstacle of reducing the transceiver size, and they also restrict the noise, gain, and power consumption optimization of LNA, because it is impossible to chose the impedance of off chip filters. For this reason there is great demand for ultra-miniaturization and monolithic integration of the balanced FBAR (Film Bulk Acoustic Resonator) filter and duplexer as a core component in communication systems.