Complementary thin film electronics based on ZnO/ZnTe

Thin film transistors for large-area and/or flexible electronics desire materials with the maximum carrier mobility while maintaining a reasonable deposition temperature. Semiconducting oxides including polycrystalline ZnO and amorphous IGZO have emerged as important candidates for thin film transistors due to their relatively high carrier mobility (~10cm2/Vs) in comparison to amorphous silicon and organic thin films. Digital logic and related electronic circuitry based on semiconducting oxides would benefit tremendously from a complementary device technology. However, these materials are all intrinsically n-type and have not demonstrated a reliable means for obtaining p-type thin films. Alternatively, polycrystalline ZnTe thin films are intrinsically p-type and exhibit relatively high hole mobility (~5cm2/Vs) at low deposition temperatures (<300°C). In this work, ZnO and ZnTe thin film transistors (TFTs) and associated complementary logic inverters are demonstrated.

Thin film transistors for large-area and/or flexible electronics desire materials with the maximum carrier mobility while maintaining a reasonable deposition temperature. Semiconducting oxides including polycrystalline ZnO and amorphous IGZO have recently emerged as important candidates for thin film transistors due to their relatively high carrier mobility (~10cm²/Vs) in comparison to amorphous silicon and organic thin films. Digital logic and related electronic circuitry based on semiconducting oxides would benefit tremendously from a complementary device technology. However, these materials are all intrinsically n-type and have not demonstrated a reliable means for obtaining p-type thin films. Alternatively, polycrystalline ZnTe thin films are intrinsically p-type and exhibit relatively high hole mobility (~5cm²/Vs) at low deposition temperatures (<300°C). In this work, ZnO and ZnTe thin film transistors (TFTs) and associated complementary logic inverters are demonstrated.