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8.9-Megapixel Video Image Sensor With 14-b Column-Parallel SA-ADC | IEEE Journals & Magazine | IEEE Xplore

8.9-Megapixel Video Image Sensor With 14-b Column-Parallel SA-ADC


Abstract:

An 8.9-megapixel 60-frames/s video image sensor with a 14-b column-parallel analog-to-digital converter (ADC) has been developed. A gain amplifier, a 14-b successive appr...Show More

Abstract:

An 8.9-megapixel 60-frames/s video image sensor with a 14-b column-parallel analog-to-digital converter (ADC) has been developed. A gain amplifier, a 14-b successive approximation ADC (SA-ADC), and a new column digital processor are employed in each column. The SA-ADC has sufficient operation speed to convert the pixel reset and the pixel signal into digital data in a row operation cycle. The column digital processor receives bit serial data from the SA-ADC output and performs subtraction of the reset data from the signal data in order to reduce column fixed pattern noise (FPN). Column FPN is successfully reduced to 0.36 erms - by this digital-domain column FPN correction. Low-voltage low-power serial video interface and noise decoupling on pixel drive voltages contribute to row-temporal-noise reduction to 0.31 erms -. Both column FPN and row temporal noise are not visible in spite of a low readout noise floor of 2.8 erms -.
Published in: IEEE Transactions on Electron Devices ( Volume: 56, Issue: 11, November 2009)
Page(s): 2380 - 2389
Date of Publication: 06 October 2009

ISSN Information:

Author image of Shinichiro Matsuo
Aptina Japan, LLC, Tokyo, Japan
Shinichiro Matsuo received the M.S. degree in electronic device engineering from Kyushu University, Fukuoka, Japan, in 1999.
He joined Fujitsu, Ltd., in 1999 and was engaged in the development of high-speed interface circuit IPs. He worked on the design of serializers, deserializers, transmitters, receivers, and other circuits for IPs. In 2004, he joined Micron Japan, Ltd., Nishiwaki City, Japan, and was engaged in digital...Show More
Shinichiro Matsuo received the M.S. degree in electronic device engineering from Kyushu University, Fukuoka, Japan, in 1999.
He joined Fujitsu, Ltd., in 1999 and was engaged in the development of high-speed interface circuit IPs. He worked on the design of serializers, deserializers, transmitters, receivers, and other circuits for IPs. In 2004, he joined Micron Japan, Ltd., Nishiwaki City, Japan, and was engaged in digital...View more
Author image of Timothy J. Bales
Aptina Japan, LLC, Tokyo, Japan
Timothy J. Bales received the B.Eng. degree (first class honors) in electrical and electronic engineering from the Heriot Watt University, Edinburgh, U.K., in 1989.
In 1989, he joined Ferranti Radar Systems, Edinburgh, where he developed digital systems and ASICs. He continued to increase his knowledge in the same sector from 1991 to 1994 with CFE Video Systems, Paris, France. In 1994, he moved to EM Microelectronics, Mari...Show More
Timothy J. Bales received the B.Eng. degree (first class honors) in electrical and electronic engineering from the Heriot Watt University, Edinburgh, U.K., in 1989.
In 1989, he joined Ferranti Radar Systems, Edinburgh, where he developed digital systems and ASICs. He continued to increase his knowledge in the same sector from 1991 to 1994 with CFE Video Systems, Paris, France. In 1994, he moved to EM Microelectronics, Mari...View more
Author image of Masahiro Shoda
Aptina Japan, LLC, Tokyo, Japan
Masahiro Shoda received the B.S. degree in applied physics from the Science University of Tokyo Rika, Tokyo, Japan, in 1977.
He joined TOKO Company, Tokyo, Japan, in 1977. He was involved in developments of CMOS digital processes and DRAM processes. In 1981, he joined Nikon Company, where he was involved in the developments of IR-CCD sensors and uncooled IR image sensors. In 2004, he joined Micron Japan, Ltd., Nishiwaki Ci...Show More
Masahiro Shoda received the B.S. degree in applied physics from the Science University of Tokyo Rika, Tokyo, Japan, in 1977.
He joined TOKO Company, Tokyo, Japan, in 1977. He was involved in developments of CMOS digital processes and DRAM processes. In 1981, he joined Nikon Company, where he was involved in the developments of IR-CCD sensors and uncooled IR image sensors. In 2004, he joined Micron Japan, Ltd., Nishiwaki Ci...View more
Author image of Shinji Osawa
Aptina Japan, LLC, Tokyo, Japan
Shinji Osawa was born in Shizuoka, Japan, in 1961. He received the B.E. and M.E. degrees in electrical engineering from “Denki-Tsushin” University, Tokyo, Japan, in 1984 and 1986, respectively.
He joined Toshiba Corporation, Kawasaki, Japan, in 1986 and engaged in the research and development of CCD and CMOS image sensors at the R&D Center. After that, he moved to the Analog LSI design section and was engaged in CMOS image...Show More
Shinji Osawa was born in Shizuoka, Japan, in 1961. He received the B.E. and M.E. degrees in electrical engineering from “Denki-Tsushin” University, Tokyo, Japan, in 1984 and 1986, respectively.
He joined Toshiba Corporation, Kawasaki, Japan, in 1986 and engaged in the research and development of CCD and CMOS image sensors at the R&D Center. After that, he moved to the Analog LSI design section and was engaged in CMOS image...View more
Author image of Katsuyuki Kawamura
Aptina Japan, LLC, Tokyo, Japan
Katsuyuki Kawamura received the B.S. and M.S. degrees in engineering from Yokohama National University, Yokohama, Japan, in 1995 and 1997, respectively.
He investigated nonlinear waves in electric circuits such as soliton, cnoidal waves, or shock waves. He joined Sharp Corporation in 1997. He developed analog ICs for some fields of industry from 1997 to 1999. He worked on optical devices and developed various photodetect I...Show More
Katsuyuki Kawamura received the B.S. and M.S. degrees in engineering from Yokohama National University, Yokohama, Japan, in 1995 and 1997, respectively.
He investigated nonlinear waves in electric circuits such as soliton, cnoidal waves, or shock waves. He joined Sharp Corporation in 1997. He developed analog ICs for some fields of industry from 1997 to 1999. He worked on optical devices and developed various photodetect I...View more
Author image of Anders Andersson
Aptina Japan, LLC, Tokyo, Japan
Anders Andersson received the M.S.E.E. degree in computer science and electronics engineering from The Institute of Technology (LiTH), Linköping University, Linköping, Sweden, in 1997.
He was with Integrated Vision Products AB, Linköping, from 1995 and designed his first CMOS sensor in 1996. He joined Photobit Corporation, Pasadena, CA, in 1998, where he worked on several custom CMOS image sensor design projects. In Novemb...Show More
Anders Andersson received the M.S.E.E. degree in computer science and electronics engineering from The Institute of Technology (LiTH), Linköping University, Linköping, Sweden, in 1997.
He was with Integrated Vision Products AB, Linköping, from 1995 and designed his first CMOS sensor in 1996. He joined Photobit Corporation, Pasadena, CA, in 1998, where he worked on several custom CMOS image sensor design projects. In Novemb...View more
Author image of Munirul Haque
Aptina Japan, LLC, Tokyo, Japan
Munirul Haque received the M.S. degree in information sciences from Tohoku University, Sendai, Japan, in 2005.
He was a Research Associate with the Graduate School of Information Sciences, Tohoku University, from 2005 to 2006. His research interest was multiple valued logic (MVL), and he has published several IEEE conference papers on MVL LSI. He joined Micron Japan, Ltd., in 2006. He is currently a Design Engineer with Ap...Show More
Munirul Haque received the M.S. degree in information sciences from Tohoku University, Sendai, Japan, in 2005.
He was a Research Associate with the Graduate School of Information Sciences, Tohoku University, from 2005 to 2006. His research interest was multiple valued logic (MVL), and he has published several IEEE conference papers on MVL LSI. He joined Micron Japan, Ltd., in 2006. He is currently a Design Engineer with Ap...View more
Author image of Hidenari Honda
Aptina Japan, LLC, Tokyo, Japan
Hidenari Honda received the B.E. degree in electronics from Fukuoka University, Fukuoka, Japan, in 1999.
He joined Nippon Systemware Company Ltd. in 1999 and was engaged in the digital design of image processors for digital still cameras. In 2003, he joined Olympus Corporation and was engaged in the digital design of image processors for digital still cameras and endoscopes. Since 2007, he has been with Aptina Japan, LLC, ...Show More
Hidenari Honda received the B.E. degree in electronics from Fukuoka University, Fukuoka, Japan, in 1999.
He joined Nippon Systemware Company Ltd. in 1999 and was engaged in the digital design of image processors for digital still cameras. In 2003, he joined Olympus Corporation and was engaged in the digital design of image processors for digital still cameras and endoscopes. Since 2007, he has been with Aptina Japan, LLC, ...View more
Author image of Bryan Almond
Aptina Japan, LLC, Tokyo, Japan
Bryan Almond received the B.Sc. degree in physics with microcomputing from the University of Sussex, Brighton, U.K., in 1987 and the M.Sc. degree in microelectronics from the University of Durham, Durham, U.K., in 1988.
He was with GEC Marconi Hirst Research Center from 1988 to 1995 and LSI Logic Europe from 1995 to 1998. In 1998, he was with Micron Europe Ltd., Berkshire, U.K., and since that same year, he has been with A...Show More
Bryan Almond received the B.Sc. degree in physics with microcomputing from the University of Sussex, Brighton, U.K., in 1987 and the M.Sc. degree in microelectronics from the University of Durham, Durham, U.K., in 1988.
He was with GEC Marconi Hirst Research Center from 1988 to 1995 and LSI Logic Europe from 1995 to 1998. In 1998, he was with Micron Europe Ltd., Berkshire, U.K., and since that same year, he has been with A...View more
Author image of Yaowu Mo
Aptina Japan, LLC, Tokyo, Japan
Yaowu Mo received the Ph.D. degree in electronic engineering from Shanghai Research Institute of Technical Physics, Shanghai, China, in 1997.
He joined Shanghai University, Shanghai, in 1992 and was engaged in the research and development of image sensors from then. In 1997, he joined the Technology Research Institute of Osaka Prefecture (TRI-Osaka), Japan, as a Visiting Researcher and worked on the research and developmen...Show More
Yaowu Mo received the Ph.D. degree in electronic engineering from Shanghai Research Institute of Technical Physics, Shanghai, China, in 1997.
He joined Shanghai University, Shanghai, in 1992 and was engaged in the research and development of image sensors from then. In 1997, he joined the Technology Research Institute of Osaka Prefecture (TRI-Osaka), Japan, as a Visiting Researcher and worked on the research and developmen...View more
Author image of Jeffrey Gleason
Aptina Japan, LLC, Tokyo, Japan
Jeffrey Gleason received the B.S. degree in material science and engineering from Rensselaer Polytechnic Institute, Troy, NY, in 2001 and the M.S. and the Ph.D. candidacy from the University of Michigan, Ann Arbor, in 2004, where he studied dilute magnetic semiconductor alloys.
He began working for Micron Imaging in 2004 as a CMOS image sensor Product Engineer. Since 2008, he has been a Pixel Characterization Engineer with...Show More
Jeffrey Gleason received the B.S. degree in material science and engineering from Rensselaer Polytechnic Institute, Troy, NY, in 2001 and the M.S. and the Ph.D. candidacy from the University of Michigan, Ann Arbor, in 2004, where he studied dilute magnetic semiconductor alloys.
He began working for Micron Imaging in 2004 as a CMOS image sensor Product Engineer. Since 2008, he has been a Pixel Characterization Engineer with...View more
Author image of Tony Chow
Aptina Japan, LLC, Tokyo, Japan
Tony Chow received the M.S. degree in electrical engineering from Queen's University, Kingston, ON, Canada, in 2005. His thesis work was on high-speed RF digital modulator design at 30 GHz.
He joined Micron Technology Inc. in 2006. He is currently with Aptina LLC, San Jose, CA.
Tony Chow received the M.S. degree in electrical engineering from Queen's University, Kingston, ON, Canada, in 2005. His thesis work was on high-speed RF digital modulator design at 30 GHz.
He joined Micron Technology Inc. in 2006. He is currently with Aptina LLC, San Jose, CA.View more
Author image of Isao Takayanagi
Aptina Japan, LLC, Tokyo, Japan
Isao Takayanagi (M'02) received the M.S. degree in physics from Gakushuin University, Tokyo, Japan, in 1987.
He joined Olympus Optical Company, Ltd., Tokyo, in 1987 and was engaged in the research and development of active pixel imagers including static induction transistor imagers, charge modulation device imagers, and amplified MOS imagers. He worked on pixel device physics and modeling, imager technology development, on...Show More
Isao Takayanagi (M'02) received the M.S. degree in physics from Gakushuin University, Tokyo, Japan, in 1987.
He joined Olympus Optical Company, Ltd., Tokyo, in 1987 and was engaged in the research and development of active pixel imagers including static induction transistor imagers, charge modulation device imagers, and amplified MOS imagers. He worked on pixel device physics and modeling, imager technology development, on...View more

I. Introduction

The resolution of an image is one of the key specifications of image quality, and the image resolution of digital cameras has been increased. This trend is also true in video broadcast applications. In 2002, a 32-megapixel video camera system was demonstrated as a next-generation high-resolution broadcast system [1], which uses three 8-megapixel 2.5-in optical format CCDs [2]. Next, we developed a 1.25-in 8.3-megapixel video CMOS image sensor to reduce both optical size and power consumption in 2003 [3], [4] and the sensor was utilized in a broadcast camera [5]. In this image sensor, a 10-b column-parallel analog-to-digital converter (ADC) was implemented, and the advantages of the CMOS image sensor, such as high-speed and low-power operations, were demonstrated successfully in broadcasting applications. However, further sensitivity improvement and increase of digital resolution were demanded to expand application fields. The major noise source of the sensor was pixel noise caused by a photodiode (PD) reset of a traditional three-transistor pixel. The sensitivity of the broadcasting camera that employed the aforementioned CMOS image sensor was evaluated as 2000-lx F2.8 [5] limited by readout noise. To obtain comparable sensitivity to that of standard CCD broadcasting cameras of 2000-lx F8, the noise level must be reduced to, at least, less than 1/8. Increase of digital resolution was also demanded. Although a 10-b ADC resolution was acceptable in general video image processing, at least 12 b of resolution is required for high-end video cameras, which provides flexibility in the back-end image processing.

Author image of Shinichiro Matsuo
Aptina Japan, LLC, Tokyo, Japan
Shinichiro Matsuo received the M.S. degree in electronic device engineering from Kyushu University, Fukuoka, Japan, in 1999.
He joined Fujitsu, Ltd., in 1999 and was engaged in the development of high-speed interface circuit IPs. He worked on the design of serializers, deserializers, transmitters, receivers, and other circuits for IPs. In 2004, he joined Micron Japan, Ltd., Nishiwaki City, Japan, and was engaged in digital design for CMOS image sensors. Since 2008, he has been with the Design Center, Aptina Japan, LLC, Tokyo, Japan.
Mr. Matsuo is a member of the Institute of Image Information and Television Engineers in Japan.
Shinichiro Matsuo received the M.S. degree in electronic device engineering from Kyushu University, Fukuoka, Japan, in 1999.
He joined Fujitsu, Ltd., in 1999 and was engaged in the development of high-speed interface circuit IPs. He worked on the design of serializers, deserializers, transmitters, receivers, and other circuits for IPs. In 2004, he joined Micron Japan, Ltd., Nishiwaki City, Japan, and was engaged in digital design for CMOS image sensors. Since 2008, he has been with the Design Center, Aptina Japan, LLC, Tokyo, Japan.
Mr. Matsuo is a member of the Institute of Image Information and Television Engineers in Japan.View more
Author image of Timothy J. Bales
Aptina Japan, LLC, Tokyo, Japan
Timothy J. Bales received the B.Eng. degree (first class honors) in electrical and electronic engineering from the Heriot Watt University, Edinburgh, U.K., in 1989.
In 1989, he joined Ferranti Radar Systems, Edinburgh, where he developed digital systems and ASICs. He continued to increase his knowledge in the same sector from 1991 to 1994 with CFE Video Systems, Paris, France. In 1994, he moved to EM Microelectronics, Marin, Switzerland, where he developed numerous low-power mixed-signal microcontrollers. He acquired further mixed experience working as an Applications Engineer with LSI Logic, Bracknell, U.K. (1997–1999). From 1999 to 2008, he was with Micron Europe Ltd., Berkshire, U.K. Since 2008, he has been with Aptina U.K. Ltd., Berkshire. He has developed PLL and high-speed IO and various CMOS imagers, ranging from VGA to 8 megapixels. He recently spent 3 years working at Aptina Japan, LLC, where his first assignment involved the leadership of the analogue team who designed the CMOS image sensor which is reported in this paper. He holds 14 U.S. patents, related to integrated circuit design and packaging.
Mr. Bales was awarded the title of Fellow of Micron Technologies in 2005.
Timothy J. Bales received the B.Eng. degree (first class honors) in electrical and electronic engineering from the Heriot Watt University, Edinburgh, U.K., in 1989.
In 1989, he joined Ferranti Radar Systems, Edinburgh, where he developed digital systems and ASICs. He continued to increase his knowledge in the same sector from 1991 to 1994 with CFE Video Systems, Paris, France. In 1994, he moved to EM Microelectronics, Marin, Switzerland, where he developed numerous low-power mixed-signal microcontrollers. He acquired further mixed experience working as an Applications Engineer with LSI Logic, Bracknell, U.K. (1997–1999). From 1999 to 2008, he was with Micron Europe Ltd., Berkshire, U.K. Since 2008, he has been with Aptina U.K. Ltd., Berkshire. He has developed PLL and high-speed IO and various CMOS imagers, ranging from VGA to 8 megapixels. He recently spent 3 years working at Aptina Japan, LLC, where his first assignment involved the leadership of the analogue team who designed the CMOS image sensor which is reported in this paper. He holds 14 U.S. patents, related to integrated circuit design and packaging.
Mr. Bales was awarded the title of Fellow of Micron Technologies in 2005.View more
Author image of Masahiro Shoda
Aptina Japan, LLC, Tokyo, Japan
Masahiro Shoda received the B.S. degree in applied physics from the Science University of Tokyo Rika, Tokyo, Japan, in 1977.
He joined TOKO Company, Tokyo, Japan, in 1977. He was involved in developments of CMOS digital processes and DRAM processes. In 1981, he joined Nikon Company, where he was involved in the developments of IR-CCD sensors and uncooled IR image sensors. In 2004, he joined Micron Japan, Ltd., Nishiwaki City, Japan. Currently, he is involved in the developments of CMOS image sensors with Aptina Japan, LLC, Tokyo.
Masahiro Shoda received the B.S. degree in applied physics from the Science University of Tokyo Rika, Tokyo, Japan, in 1977.
He joined TOKO Company, Tokyo, Japan, in 1977. He was involved in developments of CMOS digital processes and DRAM processes. In 1981, he joined Nikon Company, where he was involved in the developments of IR-CCD sensors and uncooled IR image sensors. In 2004, he joined Micron Japan, Ltd., Nishiwaki City, Japan. Currently, he is involved in the developments of CMOS image sensors with Aptina Japan, LLC, Tokyo.View more
Author image of Shinji Osawa
Aptina Japan, LLC, Tokyo, Japan
Shinji Osawa was born in Shizuoka, Japan, in 1961. He received the B.E. and M.E. degrees in electrical engineering from “Denki-Tsushin” University, Tokyo, Japan, in 1984 and 1986, respectively.
He joined Toshiba Corporation, Kawasaki, Japan, in 1986 and engaged in the research and development of CCD and CMOS image sensors at the R&D Center. After that, he moved to the Analog LSI design section and was engaged in CMOS image sensors. Since 2006, he has been with Aptina Japan LLC, Tokyo, developing CMOS image sensors particularly for the large pixel format and high-speed readout.
Mr. Osawa is a member of the Institute of Image Information and Television Engineers in Japan.
Shinji Osawa was born in Shizuoka, Japan, in 1961. He received the B.E. and M.E. degrees in electrical engineering from “Denki-Tsushin” University, Tokyo, Japan, in 1984 and 1986, respectively.
He joined Toshiba Corporation, Kawasaki, Japan, in 1986 and engaged in the research and development of CCD and CMOS image sensors at the R&D Center. After that, he moved to the Analog LSI design section and was engaged in CMOS image sensors. Since 2006, he has been with Aptina Japan LLC, Tokyo, developing CMOS image sensors particularly for the large pixel format and high-speed readout.
Mr. Osawa is a member of the Institute of Image Information and Television Engineers in Japan.View more
Author image of Katsuyuki Kawamura
Aptina Japan, LLC, Tokyo, Japan
Katsuyuki Kawamura received the B.S. and M.S. degrees in engineering from Yokohama National University, Yokohama, Japan, in 1995 and 1997, respectively.
He investigated nonlinear waves in electric circuits such as soliton, cnoidal waves, or shock waves. He joined Sharp Corporation in 1997. He developed analog ICs for some fields of industry from 1997 to 1999. He worked on optical devices and developed various photodetect ICs from 1999 to 2004. He joined Micron Japan, Ltd., Nishiwaki City, Japan, in 2004 and was engaged in the development of column amplifiers or column ADCs for CMOS imagers. Since 2008, he has been with Aptina Japan, LLC, Tokyo, Japan.
Katsuyuki Kawamura received the B.S. and M.S. degrees in engineering from Yokohama National University, Yokohama, Japan, in 1995 and 1997, respectively.
He investigated nonlinear waves in electric circuits such as soliton, cnoidal waves, or shock waves. He joined Sharp Corporation in 1997. He developed analog ICs for some fields of industry from 1997 to 1999. He worked on optical devices and developed various photodetect ICs from 1999 to 2004. He joined Micron Japan, Ltd., Nishiwaki City, Japan, in 2004 and was engaged in the development of column amplifiers or column ADCs for CMOS imagers. Since 2008, he has been with Aptina Japan, LLC, Tokyo, Japan.View more
Author image of Anders Andersson
Aptina Japan, LLC, Tokyo, Japan
Anders Andersson received the M.S.E.E. degree in computer science and electronics engineering from The Institute of Technology (LiTH), Linköping University, Linköping, Sweden, in 1997.
He was with Integrated Vision Products AB, Linköping, from 1995 and designed his first CMOS sensor in 1996. He joined Photobit Corporation, Pasadena, CA, in 1998, where he worked on several custom CMOS image sensor design projects. In November 2001, he joined Micron Technology Inc., working at the company design centers in Pasadena, CA, and Oslo, Norway. Since January 2007, he has been with Aptina Japan LLC, Tokyo, Japan, where he is a Physical Integration Manager. He is currently the holder of 8 U.S. patents and has published several technical papers.
Anders Andersson received the M.S.E.E. degree in computer science and electronics engineering from The Institute of Technology (LiTH), Linköping University, Linköping, Sweden, in 1997.
He was with Integrated Vision Products AB, Linköping, from 1995 and designed his first CMOS sensor in 1996. He joined Photobit Corporation, Pasadena, CA, in 1998, where he worked on several custom CMOS image sensor design projects. In November 2001, he joined Micron Technology Inc., working at the company design centers in Pasadena, CA, and Oslo, Norway. Since January 2007, he has been with Aptina Japan LLC, Tokyo, Japan, where he is a Physical Integration Manager. He is currently the holder of 8 U.S. patents and has published several technical papers.View more
Author image of Munirul Haque
Aptina Japan, LLC, Tokyo, Japan
Munirul Haque received the M.S. degree in information sciences from Tohoku University, Sendai, Japan, in 2005.
He was a Research Associate with the Graduate School of Information Sciences, Tohoku University, from 2005 to 2006. His research interest was multiple valued logic (MVL), and he has published several IEEE conference papers on MVL LSI. He joined Micron Japan, Ltd., in 2006. He is currently a Design Engineer with Aptina Japan LLC, Tokyo, Japan.
Munirul Haque received the M.S. degree in information sciences from Tohoku University, Sendai, Japan, in 2005.
He was a Research Associate with the Graduate School of Information Sciences, Tohoku University, from 2005 to 2006. His research interest was multiple valued logic (MVL), and he has published several IEEE conference papers on MVL LSI. He joined Micron Japan, Ltd., in 2006. He is currently a Design Engineer with Aptina Japan LLC, Tokyo, Japan.View more
Author image of Hidenari Honda
Aptina Japan, LLC, Tokyo, Japan
Hidenari Honda received the B.E. degree in electronics from Fukuoka University, Fukuoka, Japan, in 1999.
He joined Nippon Systemware Company Ltd. in 1999 and was engaged in the digital design of image processors for digital still cameras. In 2003, he joined Olympus Corporation and was engaged in the digital design of image processors for digital still cameras and endoscopes. Since 2007, he has been with Aptina Japan, LLC, Tokyo, Japan.
Hidenari Honda received the B.E. degree in electronics from Fukuoka University, Fukuoka, Japan, in 1999.
He joined Nippon Systemware Company Ltd. in 1999 and was engaged in the digital design of image processors for digital still cameras. In 2003, he joined Olympus Corporation and was engaged in the digital design of image processors for digital still cameras and endoscopes. Since 2007, he has been with Aptina Japan, LLC, Tokyo, Japan.View more
Author image of Bryan Almond
Aptina Japan, LLC, Tokyo, Japan
Bryan Almond received the B.Sc. degree in physics with microcomputing from the University of Sussex, Brighton, U.K., in 1987 and the M.Sc. degree in microelectronics from the University of Durham, Durham, U.K., in 1988.
He was with GEC Marconi Hirst Research Center from 1988 to 1995 and LSI Logic Europe from 1995 to 1998. In 1998, he was with Micron Europe Ltd., Berkshire, U.K., and since that same year, he has been with Aptina U.K. Ltd., Berkshire, working on several CMOS image sensor design projects.
Bryan Almond received the B.Sc. degree in physics with microcomputing from the University of Sussex, Brighton, U.K., in 1987 and the M.Sc. degree in microelectronics from the University of Durham, Durham, U.K., in 1988.
He was with GEC Marconi Hirst Research Center from 1988 to 1995 and LSI Logic Europe from 1995 to 1998. In 1998, he was with Micron Europe Ltd., Berkshire, U.K., and since that same year, he has been with Aptina U.K. Ltd., Berkshire, working on several CMOS image sensor design projects.View more
Author image of Yaowu Mo
Aptina Japan, LLC, Tokyo, Japan
Yaowu Mo received the Ph.D. degree in electronic engineering from Shanghai Research Institute of Technical Physics, Shanghai, China, in 1997.
He joined Shanghai University, Shanghai, in 1992 and was engaged in the research and development of image sensors from then. In 1997, he joined the Technology Research Institute of Osaka Prefecture (TRI-Osaka), Japan, as a Visiting Researcher and worked on the research and development of on-chip signal processing circuits for microelectromechanical systems. In 2003, he joined Seiko–Epson Corporation and worked on CMOS image sensors. In 2005, he joined the Japan Imaging Design Center, Micron Japan, Ltd., Nishiwaki City, Japan, and worked on the development of high-speed CMOS image sensors. Since 2008, he has been with Aptina LLC, San Jose, CA.
Yaowu Mo received the Ph.D. degree in electronic engineering from Shanghai Research Institute of Technical Physics, Shanghai, China, in 1997.
He joined Shanghai University, Shanghai, in 1992 and was engaged in the research and development of image sensors from then. In 1997, he joined the Technology Research Institute of Osaka Prefecture (TRI-Osaka), Japan, as a Visiting Researcher and worked on the research and development of on-chip signal processing circuits for microelectromechanical systems. In 2003, he joined Seiko–Epson Corporation and worked on CMOS image sensors. In 2005, he joined the Japan Imaging Design Center, Micron Japan, Ltd., Nishiwaki City, Japan, and worked on the development of high-speed CMOS image sensors. Since 2008, he has been with Aptina LLC, San Jose, CA.View more
Author image of Jeffrey Gleason
Aptina Japan, LLC, Tokyo, Japan
Jeffrey Gleason received the B.S. degree in material science and engineering from Rensselaer Polytechnic Institute, Troy, NY, in 2001 and the M.S. and the Ph.D. candidacy from the University of Michigan, Ann Arbor, in 2004, where he studied dilute magnetic semiconductor alloys.
He began working for Micron Imaging in 2004 as a CMOS image sensor Product Engineer. Since 2008, he has been a Pixel Characterization Engineer with Aptina LLC, San Jose, CA, focusing on the high-end digital-camera market.
Jeffrey Gleason received the B.S. degree in material science and engineering from Rensselaer Polytechnic Institute, Troy, NY, in 2001 and the M.S. and the Ph.D. candidacy from the University of Michigan, Ann Arbor, in 2004, where he studied dilute magnetic semiconductor alloys.
He began working for Micron Imaging in 2004 as a CMOS image sensor Product Engineer. Since 2008, he has been a Pixel Characterization Engineer with Aptina LLC, San Jose, CA, focusing on the high-end digital-camera market.View more
Author image of Tony Chow
Aptina Japan, LLC, Tokyo, Japan
Tony Chow received the M.S. degree in electrical engineering from Queen's University, Kingston, ON, Canada, in 2005. His thesis work was on high-speed RF digital modulator design at 30 GHz.
He joined Micron Technology Inc. in 2006. He is currently with Aptina LLC, San Jose, CA.
Tony Chow received the M.S. degree in electrical engineering from Queen's University, Kingston, ON, Canada, in 2005. His thesis work was on high-speed RF digital modulator design at 30 GHz.
He joined Micron Technology Inc. in 2006. He is currently with Aptina LLC, San Jose, CA.View more
Author image of Isao Takayanagi
Aptina Japan, LLC, Tokyo, Japan
Isao Takayanagi (M'02) received the M.S. degree in physics from Gakushuin University, Tokyo, Japan, in 1987.
He joined Olympus Optical Company, Ltd., Tokyo, in 1987 and was engaged in the research and development of active pixel imagers including static induction transistor imagers, charge modulation device imagers, and amplified MOS imagers. He worked on pixel device physics and modeling, imager technology development, on-chip image processing, and scientific imagers. In 2000, he joined Photobit Corporation and was engaged in contract R&D, where he performed custom CMOS imager designs. From 2001 to 2008, he was with the Japan Imaging Design Center, Micron Japan, Ltd., Nishiwaki City, Japan. Currently, he is with Aptina Japan LLC, Tokyo.
Mr. Takayanagi is a member of the Institute of Image Information and Television Engineers in Japan and the Japan Society of Applied Physics.
Isao Takayanagi (M'02) received the M.S. degree in physics from Gakushuin University, Tokyo, Japan, in 1987.
He joined Olympus Optical Company, Ltd., Tokyo, in 1987 and was engaged in the research and development of active pixel imagers including static induction transistor imagers, charge modulation device imagers, and amplified MOS imagers. He worked on pixel device physics and modeling, imager technology development, on-chip image processing, and scientific imagers. In 2000, he joined Photobit Corporation and was engaged in contract R&D, where he performed custom CMOS imager designs. From 2001 to 2008, he was with the Japan Imaging Design Center, Micron Japan, Ltd., Nishiwaki City, Japan. Currently, he is with Aptina Japan LLC, Tokyo.
Mr. Takayanagi is a member of the Institute of Image Information and Television Engineers in Japan and the Japan Society of Applied Physics.View more

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