Optimally scaled low-voltage vertical power MOSFETs for high-frequency power conversion

The systematic optimization of low-voltage silicon power MOSFET technology is described. It is shown that device scaling using advanced fabrication technologies can result in nearly optimal performance from low-voltage silicon power MOSFETs. The details discussed include: (1) system impact; (2) unit cell optimization; (3) device and process modeling; (4) fabrication technology development; and (5) performance results. The device technologies optimized include 30-, 50-, and 100-V vertical power DMOSFETs with optimally scaled gate polysilicon and source/drain contacts. Devices with the lowest specific on-resistance, the lowest specific input capacitance, and improved high-frequency switching performance have been fabricated with excellent wafer yield. This is the first successful demonstration of device scaling and its impact on performance of high-voltage and smart-power technologies.<>