Abstract:
A novel wavelength-selective InGaAs/InP coupled asymmetric quantum well electrorefraction type optical intensity modulator is proposed. The device is based on contradirec...Show MoreMetadata
Abstract:
A novel wavelength-selective InGaAs/InP coupled asymmetric quantum well electrorefraction type optical intensity modulator is proposed. The device is based on contradirectional exchange Bragg grating coupled-waveguide structure, which avoids the use of an interferometer. For a non-optimized device the bandwidth is 111 GHz at 1.67 V and it is chirp-free. The device can be integrated with lasers, optical amplifiers, photodetectors etc. It can also be integrated in tandem.
Published in: 1996 IEEE MTT-S International Microwave Symposium Digest
Date of Conference: 17-21 June 1996
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-3246-6
Print ISSN: 0149-645X