Multi-megahertz pulse width modulation converters with improved 1 /spl mu/m p-channel metal oxide semiconductor transistors | IEEE Conference Publication | IEEE Xplore

Multi-megahertz pulse width modulation converters with improved 1 /spl mu/m p-channel metal oxide semiconductor transistors


Abstract:

Pulse width modulation (PWM) techniques have been limited to 1 to 2 MHz by the switching speeds of currently available power switches. This limitation has been overcome b...Show More

Abstract:

Pulse width modulation (PWM) techniques have been limited to 1 to 2 MHz by the switching speeds of currently available power switches. This limitation has been overcome by high speed (<2 nanosecond) switching with improved 1 /spl mu/m PMOS transistors. These devices have been incorporated in a 5 MHz, PWM buck power stage that has demonstrated good efficiency (>85%) and very high power density (500 W/in/sup 3/ versus state-of-the-art 100 W/in/sup 3/).
Date of Conference: 23-23 May 1996
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-3106-0
Print ISSN: 1063-6854
Conference Location: Maui, HI, USA

References

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