Loading [MathJax]/extensions/MathMenu.js
100 Gb/s operation of an AlGaInAs semi-insulating buried heterojunction EML | IEEE Conference Publication | IEEE Xplore

100 Gb/s operation of an AlGaInAs semi-insulating buried heterojunction EML


Abstract:

A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated with a 100 Gb/s InP He...Show More

Abstract:

A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated with a 100 Gb/s InP Heterojunction Bipolar Transistor Multiplexing circuit, exhibiting an open eye diagram.
Date of Conference: 22-26 March 2009
Date Added to IEEE Xplore: 29 May 2009
ISBN Information:
Conference Location: San Diego, CA, USA
No metrics found for this document.

1. Introduction

With the continuously increasing demand for more and more bandwidth, transmission at 100 Gb/s data rate became an objective of much interest. Obviously at such high data rates, fiber dispersion is becoming an issue and various approaches are presently considered, from low spectral bandwidth coding (e.g. AP-DQPSK) for long distance transmission to simpler multilane designs (e.g. Gb/s on 4 wavelengths) for short distances. In this context, and in spite of the inherent dispersion limitation, 100 Gb/s OOK modulation offers real advantages in terms of ultimate simplicity. Small footprint, low consumption and possibly low cost solutions are attractive aspects of such transmission format.

Usage
Select a Year
2025

View as

Total usage sinceJan 2011:426
00.511.522.53JanFebMarAprMayJunJulAugSepOctNovDec102000000000
Year Total:3
Data is updated monthly. Usage includes PDF downloads and HTML views.
Contact IEEE to Subscribe

References

References is not available for this document.