Abstract:
A network theorem based on potential functions is used for the purpose of cancelling the detrimental effect that the presence of parasitic linear elements has on procedur...Show MoreMetadata
First Page of the Article
Abstract:
A network theorem based on potential functions is used for the purpose of cancelling the detrimental effect that the presence of parasitic linear elements has on procedures used for extracting the intrinsic-model parameters of semiconductor devices. The method is based on the use of an auxiliary function: the difference between the content and the co-content functions of the device. The theorem states that, for any arbitrarily connected network of linear and nonlinear branch elements, the summation of the difference functions of each of the branches is zero, and that this difference function is zero at any branch represented by a linear I-V characteristic. In establishing this theorem we also show that: (a) the summation of the contents, over all the branches, is zero; and (b) the summation of the co-contents, over all the branches, is zero. To illustrate the procedure the intrinsic model parameters of a real p-n junction are extracted using this idea.
Published in: Proceedings of First International Caracas Conference on Devices, Circuits and Systems
Date of Conference: 12-14 December 1995
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-2672-5
First Page of the Article
References is not available for this document.
Select All
1.
D. K. Schroeder, Semiconductor Material and Device Characterization, New York:Wiley, 1990.
2.
J. J. Liou, Advanced Semiconductor Device Physics and Modeling, Norwood:Artech House Publishers, 1994.
3.
F. J. García Sánchez, A. Ortiz-Conde, M. G. Núnez and R.L. Anderson, "Extracting the series resistance and effective channel length of short-channel MOFETs at liquid nitrogen temperature", Solid-St. Electron., vol. 37, pp. 1943-1948, 1994.
4.
G. L. Araujo and E. Sánchez, "A new method for experimental determination of the series resistance of a solar cell", IEEE Trans. Electron Dev., vol. ED-29, pp. 1511-1513, 1982.
5.
A. Ortiz-Conde, F. J. García Sánchez, P. E. Schmidt and R. J. Laurence, "Extraction of diode parameters from the integration of the forward current", Proc. Int. Semiconductor Device Research Symp., vol. 2, pp. 531-534, 1993.
6.
A. Ortiz-Conde, F. J. García Sánchez, J. J. Liou, J. Andrian, R. J. Laurence and P. E. Schmidt, "A generalized model for s two-terminal device and its application to parameter extraction", Solid-St. Electron., vol. 38, pp. 265-266, 1995.
7.
L. O. Chua, "Stationary principles and potential functions for nonlinear networks", J. of The Franklin Inst., vol. 296, pp. 91-114, 1973.
8.
T. Uenoyama, L. Esaki and H. Kotera, "Theory of stability in a nonlinear resistive network'", Appl. Phys. Lett., vol. 61, pp. 363-365, 1992.
9.
L. O. Chua, C. A. Desoer and E. S. Kuh, Linear and nonlinear Circuits, New York:McGraw-Hill, 1987.
10.
B. D. H. Tellegen, "A general network theorem with applications", Philips Research Reports, vol. 7, pp. 259-269, 1952.
11.
F. J. G. Sanchez, A. Ortiz-Conde and J. J. Liou, "Calculating double-exponential diode model parameters from previously extracted single-exponential model parameters", Electr. Lett., vol. 31, pp. 71-72, 1995.
