A new oxide degradation mechanism for stresses in the Fowler-Nordheim tunneling regime | IEEE Conference Publication | IEEE Xplore

A new oxide degradation mechanism for stresses in the Fowler-Nordheim tunneling regime


Abstract:

In this study, voltage and current stress measurements in the Fowler-Nordheim regime, performed on gate oxides (9 nm-28 nm), indicated that a ramped pre-stress prior to a...Show More

Abstract:

In this study, voltage and current stress measurements in the Fowler-Nordheim regime, performed on gate oxides (9 nm-28 nm), indicated that a ramped pre-stress prior to a constant stress can increase the time to breakdown in some cases. In the literature oxide breakdown is said to be related to a fixed amount of trapped oxide charge or to a fixed amount of generated traps in the oxide. However, these models cannot explain our experimental observations. Current-time, current-charge, voltage-time characteristics and results of high frequency pre-stresses have been extensively studied in order to gain information about the charge trapping properties of the virgin and pre-stressed oxides. It is concluded from experimental results that the rate of initial positive charge build up in the oxide during the constant stress is a key factor for oxide degradation and breakdown.
Date of Conference: 30 April 1996 - 02 May 1996
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-2753-5
Conference Location: Dallas, TX, USA

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