Abstract:
This integrated circuit stores 256 analog voltage levels in high density, non-volatile memory with /spl sim/7.5m V resolution per level. By contrast, the multilevel stora...Show MoreMetadata
Abstract:
This integrated circuit stores 256 analog voltage levels in high density, non-volatile memory with /spl sim/7.5m V resolution per level. By contrast, the multilevel storage capacity of a typical digital non-volatile memory is 4-level per cell. The integrated circuit operates over a voltage range of 2.5 V to 5.5 V. Previous analog storage implementation use a 5.0 V supply for /spl sim/12 mV equivalent resolution per level in a 128 k EEPROM.
Published in: 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC
Date of Conference: 10-10 February 1996
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-3136-2
Print ISSN: 0193-6530
References is not available for this document.
Select All
1.
M. Bauer, "A Multilevel-Cell 32Mb Flash Memory", ISSCC Digest of Technical Papers, 1995-Feb.
2.
T. Blyth, S. Khan and R. Simko, "A Non-Volatile Analog Storage Device Using EEPROM Technology", ISSCC Digest of Technical Papers, 1991-Feb.
3.
Writable Distributed Non-Volatile Analog Reference System.
