High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser Diode

A high-power 1.3-mu m electroabsorption modulator integrated laser diode was developed for 100 - Gb/s Ethernet applications. The average output power exceeding 6.5 dBm and clear eye opening with dynamic extinction ratio over 7.6 dB were realized at 35 ^degC.

I. Introduction

In recent years, the demand of bandwidth capacity is rising exponentially due to the spread of the high-speed Internet. To cope with the demand of bandwidth, 100-Gb/s Ethernet (100GbE) is currently being standardized as a next-generation high-speed communication standard. One hundred GbE for 10 and 40 km using single-mode fiber (SMF) were unified into the wavelength-division-multiplexing local area network (WDM-LAN) systems (4×25 Gb/s, 800-GHz spacing). A 1.3- wavelength band with minimum dispersion is being considered for use in the 100-GbE WDM-LAN system. The electroabsorption modulator integrated laser diode (EML) has promised as transmitter with low frequency chirping [1]–[4].