Contents I. Introduction
The advances in nanotechnology have been revolutionizing a broad scope of spin dependent transport. Spintronics has attracted a lot of research attention about how to manipulate spin precession in magnetic systems [1]. Among these systems, magnetic nanowires offer new prospects for spintronic devices such as sensor, switch and data storage memory. Recently, some studies on spin transport in these devices have been developed in order to control spin relaxation rate [2]. Spin relaxation rate can be affected by various interaction mechanisms in such low-dimensional structures. The spin-orbit Rashba interaction is a prime instance. It arises out of the presence of structure inversion asymmetry introduced by heterojunctions, surfaces, or external fields [3]. The spin precession associated with the Rashba coupling led Datta and Das to propose a spin field-effect transistor in which the spin of electron passing through the device is controlled by the Rashba spin-orbit interaction [4]. Such a transistor generated great interest in mesoscopic spin-polarized transport in the presence of structure inversion asymmetry.
