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30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz | IEEE Journals & Magazine | IEEE Xplore

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz


Abstract:

We report on InAs pseudomorphic high-electron mobility transistors (PHEMTs) on an InP substrate with record cutoff frequency characteristics. This result was achieved by...Show More

Abstract:

We report on InAs pseudomorphic high-electron mobility transistors (PHEMTs) on an InP substrate with record cutoff frequency characteristics. This result was achieved by paying attention to minimizing resistive and capacitive parasitics and improving short-channel effects, which play a key role in high-frequency response. Toward this, the device design features a very thin channel and is fabricated through a three-step recess process that yields a scaled-down barrier thickness. A 30-nm InAs PHEMT with t_{\rm ins} = \hbox{4}\ \hbox{nm} and t_{\rm ch} = \hbox{10}\ \hbox{nm} exhibits excellent g_{m, \max} of 1.62 S/mm, f_{T} of 628 GHz, and f_{ \max} of 331 GHz at V_{\rm DS} = \hbox{0.6}\ \hbox{V} . To the knowledge of the authors, the obtained f_{T} is the highest ever reported in any FET on any material system. In addition, a 50-nm device shows the best combination of f_{T} = \hbox{557}\ \hbox{GHz} and f_{\max} = \hbox{718}\ \hbox{GHz} of any transistor technology.
Published in: IEEE Electron Device Letters ( Volume: 29, Issue: 8, August 2008)
Page(s): 830 - 833
Date of Publication: 31 August 2008

ISSN Information:


I. Introduction

InP-Based High-Electron Mobility Transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have shown great success in microwave and millimeter-wave applications. Both device technologies are excellent choices for operation in the terahertz regime. In fact, for the last 20 years, InP-based transistors have held the record of frequency response as assessed by the current-gain cutoff frequency and the maximum oscillation frequency . Current records for are 765 GHz in pseudomorphic InGaAs/InP HBTs [1] and 610 GHz in pseudomorphic InGaAs/InP HEMTs [2], and those of are 1.2 THz in HEMTs [3] and 800 GHz in HBTs [4]. These remarkable results have been achieved through the combination of downscaling of minimum feature size and parasitics reduction, and the use of active regions with very high electron velocities.

References

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